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| savantic semiconductor product specification silicon pnp power transistors 2sa968 2SA968A 2sa968b d escription with to-220 package complement to type 2sc2238 high breakdown votage applications power amplifier applications driver stage amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sa968 -160 2SA968A -180 v cbo collector-base voltage 2sa968b open emitter -200 v 2sa968 -160 2SA968A -180 v ceo collector-emitter voltage 2sa968b open base -200 v v ebo emitter-base voltage open collector -5 v i c collector current -1.5 a i e emitter current 1.5 a p t total power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2sa968 2SA968A 2sa968b characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sa968 -160 2SA968A -180 v (br)ceo collector-emitter breakdown voltage 2sa968b i c =-10ma; i b =0 -200 v v (br)ebo emitter-base breakdown voltage i e =-1ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-0.5a; i b =-50ma -1.5 v v be base-emitter on voltage i c =-500ma ; v ce =-5v -1.0 v i cbo collector cut-off current v cb =-160v ;i e =0 -1.0 a i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 a h fe dc current gain i c =-100ma ; v ce =-5v 70 240 c ob output capacitance i e =0 ; v cb =-10v,f=1mhz 30 pf f t transition frequency i c =-100ma ; v ce =10v 100 mhz h fe classifications o y 70-140 120-240 savantic semiconductor product specification 3 silicon pnp power transistors 2sa968 2SA968A 2sa968b package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm) |
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